By Wenjian Yu, Xiren Wang (auth.)
Resistance and capacitance (RC) extraction is a necessary step in modeling the interconnection wires and substrate coupling impact in nanometer-technology built-in circuits (IC). The field-solver options for RC extraction warrantly the accuracy of modeling, and have gotten more and more vital in assembly the call for for actual modeling and simulation of VLSI designs. Advanced Field-Solver innovations for RC Extraction of built-in Circuits provides a scientific creation to, and remedy of, the major field-solver equipment for RC extraction of VLSI interconnects and substrate coupling in mixed-signal ICs. numerous field-solver recommendations are defined intimately, with real-world examples to demonstrate the benefits and drawbacks of every algorithm.
This publication will profit graduate scholars and researchers within the box of electric and computing device engineering in addition to engineers operating within the IC layout and layout automation industries.
Dr. Wenjian Yu is an affiliate Professor on the division of desktop technological know-how and expertise at Tsinghua college in China; Dr. Xiren Wang is a R&D Engineer at Cadence layout structures within the USA.
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Extra info for Advanced Field-Solver Techniques for RC Extraction of Integrated Circuits
Since the Krylov subspace iterative methods are usually used for 3-D capacitance extraction, fewer nonzero matrix entries mean less memory usage and computing time by using sparse matrix data structure. Actual cases of 3-D capacitance extraction verified this analysis. 2 Decomposition of Dielectrics and Boundary Element Partition In order to decrease the additional efforts brought by the QMM decomposition, we adopt a simple strategy. Since every dielectric layer is cuboid, and each surface of it parallels to one of the three coordinate planes in the 3-D Cartesian coordinate system, we use two groups of planes parallel to the YOZ and ZOX planes, respectively, to cut all dielectric layers into pieces (see Fig.
2 Fast Multipole Methods r 23 r R R ri Fig. , l D 1 even l D 0) can introduce enough accuracy. , the sphere center, as depicted in Fig. 2 right. 4), at cost O(n). 3), for j D 1:m, at cost O(m). One may ask the question that what the computational complexity is if all evaluation points are close to each other (and well separately from the source charges). This can be answered by the local expansion below. 3 Local Expansions Now consider the case that evaluation points are much close to each other but very far from charge points, as shown in Fig.
In the direct BEM, a great deal of time and memory are consumed in forming and solving the system of discretized BEM equations. Fukuda et al.  solved the problem of 2-D capacitance extraction using the direct BEM. In 1997, Bachtold et al. extended the multipole method to handle the “potential boundary integral” (whose kernel is 1/r3 ) in the direct BEM . An adaptive boundary meshing scheme with an error indictor was also proposed. What they discussed was the model of multiple dielectrics within infinite domain.
Advanced Field-Solver Techniques for RC Extraction of Integrated Circuits by Wenjian Yu, Xiren Wang (auth.)